OptiSwitch has developed optically activated gate driver circuits for standard silicon power devices (IGBT and MOSFET) along with higher temperature silicon carbide (SiC) devices. This technology includes non-linear circuitry that is ideal for ultra-high noise immunity levels. High-temperature versions are currently being developed with greater than 200 degrees operation. Standard models can sink and source 2 amps peak with typical rise and fall times of 200ns into a 30 nF load switching 16 volts. These drivers offer complete galvanic isolation via fiber optic cables coupled with a low-power laser diode.
OGD-2A
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